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Tech - Article 2025.02.05

25V MLCC Solution for Memory Voltage Regulators with DDR5 Adoption

▷ The shift from DDR4 to DDR5 has brought significant changes to power architecture. DDR5 offers higher bandwidth and improved power efficiency compared to its predecessor, featuring a redesign that moves the voltage regulator (VR) to the inner part of the mainboard.

 

▷ In DDR4 system, the SMPS (Switching Mode Power Supply) receives 12V, which is then stepped down to 1.1V by the VR to power the memory module. Consequently, the required rated voltage for the MLCC was typically in the range of 4V to 6.3V. However, in DDR5, the 12V output from the SMPS is supplied directly to the VR, leading to an increased rated voltage requirement of 25V for the MLCC. This change in voltage not only impacts power design but also serves as a key factor in the changes of MLCC specification.

 

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▷ In response to the shifting demands of the market, Samsung Electro-Mechanics has developed the world's first 0805 inch, X6S, 22uF, 25V MLCC. This product meets all specifications required for the latest memory systems while providing high reliability.

 

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Samsung

Size (inch)

Capacitance

Rated Voltage

TCC

CL21X226MAYNNW#

0805

22uF

25V

X6S

 


SAMSUNG 25V MLCC Line-up

Samsung

Size (inch)

Related

Voltage

[Vdc]

TCC

Capacitance

MP

Status

Sample

CL21X226MAYNNW#

0805

25

X6S

22uF

MP

Available

CL31X226KAK6NW#

1206

25

X6S22uF

MP

Available

 

 

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