Memory用引线焊接高密度封装基板
用Gold Wire连接半导体芯片和封装基板，半导体 Chip 大小超过基板面积的 80%，通常被称为 WBCSP。用Gold Wire连接Chip和 PCB，可实现多封装，主要用于存储器 Chip。特别是 UTCSP(Ultra Thin CSP) 产品可以以0.13㎜以下的厚度制作产品，而且 Chip to PCB Connection 是自由的，因此可以进行 Multi Chip Packaging，与相同厚度的 Package 相比，可实现高性能。
WBCSP Lineup
Lineup by Specification
General WBCSP Road Map of HVM / Sample Product
| Routing Density | Bond Finger Pitch | 55P (25 / 12, Ni 3) (Mass Production) | 50P (20 / 10, Ni 2) (Sample Available) | |
|---|---|---|---|---|
| Line Width / Space | mSAP (Cu T 14) |
12 / 16um(Mass Production) | 10 / 15um(Sample Available) | |
| ETS (Cu T 13) |
7 / 8um (Mass Production) | 6 / 7um (Sample Available) | ||
| Via / Pad Size | mSAP | 50 / 90um(Mass Production) | 45 / 85um(Sample Available) | |
| ETS | 40 / 65um (Mass Production) | 37 / 60um (Sample Available) | ||
| SRO alignment | ± 12.5um (Mass Production) | ± 10um (Sample Available) | ||
| Min. SR Open size | 45um (Mass Production) | 40um (Sample Available) | ||
* um是指㎛。
Lineup by Structure & Z-Height
| Layer count | Structure | Thickness | |
|---|---|---|---|
| 2Layer (Mass Production) | Cored (Mass Production) | 80um (Mass Production) | 75um |
| 3Layer (Mass Production) | Coreless (Mass Production) | 80um (Mass Production) | 75um |
| ETS (Mass Production) | 120um (Mass Production) | 100um | |
| 4Layer (Mass Production) | Cored (Mass Production) | 120um (Mass Production) | 110um |
| Coreless (Mass Production) | 110um (Mass Production) | 100um | |
| ETS (Mass Production) | 160um (Mass Production) | 140um | |
| 6Layer (Mass Production) | Cored (Mass Production) | 220um (Mass Production) | 180um |
| Coreless (Mass Production) | 200um (Mass Production) | 180um | |
* um是指㎛。