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Package Substrate

Introduction to Samsung Electro-Mechanics package substrate

是移动设备和PC用半导体Package基板,它扮演半导体和主板间传送电信号以及保护昂贵半导体不收外部压力影响的角色。形成比普通电路板更精细的超高密度电路,可减少将昂贵的半导体直接贴装在主板时发生的组装不良率及成本。

FCCSP(Flip Chip Chip Scale Package)

半导体不是通过引线键合方式与基板连接,而是在倒装的状态下通过凸点与基板互连,因此而被称为“FCCSP”(Flip Chip Chip Scale Package)。主要用于移动IT设备的AP(Application Processor)半导体上。而且与采用Gold Wire的WBCSP相比,FCCSP的电信号路径更短,生成更多Input/Output,可适用于高密度半导体。

应用
移动应用程序处理器、Baseband等
半导体 Chip -> Bumping(Solder) -> Flip -> Packaging(PCB)

主要核心技术

1. Bumping 结构图
Bumping Structure image
2. μBall Bump 工艺
μBall Bump Method image
[Conventional 工艺]
Solder Paste -> Squeegee -> Metal mask
[Micro Ball 工艺]
MetalMask -> SolderBall
  • · Available for Fine Bump Pitch
  • · Good for Small Bump Risk
  • · Good Quality for Bump Characteristics

基板种类

1. EPS(Embedded Passive Substrate) & EDS(Embedded Die Substrate)

EPS/EDS是在基板内安装半导体被动元件和IC等,能够量产的基板。
Decoupling Capacitor一般用来稳定Power Supply Voltage Level,如果把IC安装在基板内,
就可以减小封装大小和厚度。

EPS, EDS
2. ETS(Embedded Trace Substrate)

ETS 是线路图形被埋入绝缘基材里面的线路板。基板采用Coreless结构,无需增加Cost,就可形成微细线路,易于进行“Layer Down”设计(4L → 3L)。
而且蚀刻工艺不会影响到图形宽度,因此,可对线路宽度进行精密控制。

[2Layer Buried Trace], [3Layer Buried Trace], [4Layer Buried Trace]

Lineup

Lineup by Specification
Mass Production Sample Available
Lineup by Specification Routing Density, Build-Up Line Width / Space etc.
Routing Density Build-Up Line Width / Space 7 / 8um (Mass Production) 6 / 7um (Sample Available)
BVH / Pad Registration 40 / 67um (Mass Production) 37 / 60um (Sample Available)
SRO Diameter SR Registration 45 ± 10um (Mass Production) 40 ± 10um (Sample Available)
FC Bump Pitch (Peripheral) 40um (Mass Production) 35um (Sample Available)
FC Bump Pitch (Area) 90um (Mass Production) 80um (Sample Available)
Low Z-Height Core / PPG Thickness 40 / 18um (Mass Production) 35 / 15um (Sample Available)
SR Thickness 10 ± 4um (Mass Production) 8 ± 3um (Sample Available)

WBCSP(Wire Bonding Chip Scale Package)

通过Gold Wire连接半导体芯片和封装基板,半导体 Chip 大小超过基板面积 80% 的产品一般被称为WBCSP。利用Gold Wire连接Chip和 PCB,可以实现多功能封装,主要用于内存 Chip。尤其可以生产厚度不到0.13mm的 UTCSP(Ultra Thin CSP) 产品,Chip to PCB Connection十分自由,能够实现 Multi Chip Packaging,实现比相同厚度的 Package 更高的性能。

应用
智能手机用内存条
Computer
  • 1. Mold
  • 2. Tape Substrate
  • 3. Gold Wire
  • 4. Solder Ball
  • 5. Copper Trace
  • [Gold Wire连接图]

Lineup

Lineup by Specification
General WBCSP Road Map of HVM / Sample Product Mass Production Sample Available
Lineup by Specification Routing Density, Bond Finger Pitch etc.
Routing Density Bond Finger Pitch 55P (25 / 12, Ni 3) (Mass Production) 50P (20 / 10, Ni 2) (Sample Available)
Line Width / Space mSAP
(Cu T 14)
12 / 16um(Mass Production) 10 / 15um(Sample Available)
ETS
(Cu T 13)
7 / 8um (Mass Production) 6 / 7um (Sample Available)
Via / Pad Size mSAP 50 / 90um(Mass Production) 45 / 85um(Sample Available)
ETS 40 / 65um (Mass Production) 37 / 60um (Sample Available)
SRO alignment ± 12.5um (Mass Production) ± 10um (Sample Available)
Min. SR Open size 45um (Mass Production) 40um (Sample Available)
Lineup by Structure & Z-Height
Mass Production Sample Available
Lineup by Structure & Z-Height Core, Layer, Thickness etc.
Layer count Structure Thickness
2Layer (Mass Production) Cored (Mass Production) 80um (Mass Production) 75um
3Layer (Mass Production) Coreless (Mass Production) 80um (Mass Production) 75um
ETS (Mass Production) 120um (Mass Production) 100um
4Layer (Mass Production) Cored (Mass Production) 120um (Mass Production) 110um
Coreless (Mass Production) 110um (Mass Production) 100um
ETS (Mass Production) 160um (Mass Production) 140um
6Layer (Mass Production) Cored (Mass Production) 220um (Mass Production) 180um
Coreless (Mass Production) 200um (Mass Production) 180um

SiP(System in Package)

Package 内贴装有多个 IC和 Passive Component,通过一个System实现综合功能的产品。而且用于 PA(Power Amplifier)等产品中,具有散热特性。
产品系列有 Flip-Chip SiP和 Coreless。

应用
PA(Power Amplifier), PAMID (Power Amplifier Module with Integrated Duplexer), FEMID(Front-End Module with Integrated Duplexer),
SAW Filter, BAW Filter, Diversity FEM, Switch 等各种 RF元件

特点

1. 小型化

将多个 IC 和被动元件综合在一个 Module中,可实现 Package 小型化。

[SiP 构成图]
  • 1. Sip
  • 2. Die 1
  • 3. Die 2
  • 4. Die 3
2. 实现厚度小的薄板

确保超薄板驱动性,可实现 0.2mm 厚度基板(6层标准)。

[ 0.2T 6L RF-SiP ](200um), [ 0.27T 8L RF-SiP ](270um), [ 10L ~, 5G 天线模块 ]

主要核心技术

1. Coreless RF-SiP

通过Coreless 工艺缩小绝缘厚度,能够控制 EMI(Electro Magnetic Interference) 和 Parasitic Inductance,提升信号特性可以此为基础实现 Thin Substrate。

Cored 基板, Coreless 基板 *可实现Thin Substrate
2. ENEPIG 表面处理

ENEPIG 表面处理技术具有如下特性。

  • 1) Thin Ni ENEPIG

    - Bonding Pad的 Ni 厚度减小,改善 RF 特性

    Thin Ni ENEPIG
    • Gold, Nickel, Copper, Palladium
    • Ni 厚度: 5~6.5um ENIG/ENEPIG
    • Gold, Nickel, Palladium, Copper
    • Ni 厚度: 0.1um Thin Ni ENEPIG
    * ENIG : Electroless Nickel Immersion Gold
    * ENEPIG : Electroless Nickel Electroless Palladium Immersion Gold
  • 2) Selective ENEPIG

    - 可在同一面进行两种表面处理(ENEPIG + OSP)

    Selective ENEPIG
    • Lorem Ipsum, ENEPIG, OSP
    • ENEPIG + OSP
    * OSP : Organic Solderability Preservative

Lineup

Lineup by Specification
Mass Production Sample Available
Lineup by Specification Layer Structure, Cored etc.
Layer Structure Cored 2L / 4L / 6L / 8L / 10L (Mass Production) + 12L / 14L (Sample Available)
Coreless 5L / 6L / 7L / 8L (Mass Production) + 4L / 9L / 10L (Sample Available)
Line Width / Space 12 / 16um (Mass Production) 10 / 15um (Sample Available)
Bump Pitch 130um (Mass Production) 105um (Sample Available)
Surface Finish Direct Au, Thin ENEPIG, Selective ENEPIG (Mass Production) Direct Au, Thin ENEPIG, Selective ENEPIG (Sample Available)

FCBGA(Flip Chip Ball Grid Array)

用于连接高度集成的半导体芯片和主板的高密度封装基板。用Flip Chip Bump连接半导体芯片和封装基板,要求基板电路的微细化和高多层的层间精细匹配,特别是为应对High Performance Computing,需要Large Body Size,高多层(~75x75㎜, 20L) 技术。

应用
CPU, GPU, Server CPU, AI Accelerator, Automotive, Network, Game Console, D-TV
FCBGA(Flip Chip Ball Grid Array) [1.Solder Ball, 2.Solder Bump, 3.Pattern, 4.Chip]

Lineup

FCB有 Standard Core、Thin Core产品。
Mass Production Sample Available
Lineup FCB FCB有 Standard Core、Thin Core产品。
Core Thickness (um) Line Width/Space
Bump Pitch
(Mass Volume)
Layer Counts
4L 6L 8L 10L 12L 14L 16L 18L 20L 22L
Standard Core 1200 9 / 12um
90um
Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Sample Available
800 Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Sample Available
600 Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production    
400 Mass Production Mass Production Mass Production Mass Production Mass Production Sample Available        
Thin Core 250 9 / 12um
100um
Mass Production Mass Production Mass Production Mass Production Sample Available          
200   Mass Production Mass Production Mass Production Sample Available          
150   Mass Production Mass Production Sample Available            

*um stands for ㎛

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